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PD-95438
IRF1503PBF
AUTOMOTIVE MOSFET
Typical Applications
14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free
HEXFET(R) Power MOSFET
D
VDSS = 30V
G S
Features
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 3.3m ID = 75A
Description
Specifically designed for Automotive applications, this design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
240 170 75 960 330 2.2 20 510 980 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A
W W/C V mJ A mJ C
300 (1.6mm from case )
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.45 --- 62
Units
C/W
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1
06/22/04
IRF1503PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 30 --- --- 2.0 75 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.028 2.6 --- --- --- --- --- --- 130 36 41 17 130 59 48 5.0 13 5730 2250 290 7580 2290 3420
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.3 m VGS = 10V, ID = 140A 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 140A 20 VDS = 30V, VGS = 0V A 250 VDS = 30V, VGS = 0V, TJ = 125C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 140A 54 nC VDS = 24V 62 VGS = 10V --- VDD = 15V --- ID = 140A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 24V, = 1.0MHz --- VGS = 0V, VDS = 0V to 24V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.049mH R G = 25, IAS = 140A. (See Figure 12). Pulse width 400s; duty cycle 2%.
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 240 showing the A G integral reverse --- --- 960 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 140A, VGS = 0V --- 71 110 ns TJ = 25C, IF = 140A, VDD = 15V --- 110 170 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production.
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IRF1503PBF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
4.5V
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 10 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T J = 25C T J = 175C
Gfs, Forward Transconductance (S)
T J = 175C 160
ID, Drain-to-Source Current ()
120
100
TJ = 25C
80
40 VDS = 25V 20s PULSE WIDTH 0 0 40 80 120 160 200
10 4.0 5.0 6.0
VDS = 25V 20s PULSE WIDTH
7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
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IRF1503PBF
10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds
20 ID= 140A
8000
VGS , Gate-to-Source Voltage (V)
VDS= 24V
16
C, Capacitance (pF)
6000
Ciss
12
4000
8
Coss
2000
4
Crss
0 1 10 100
0 0 40 80 120 160 200 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
10000 OPERATION IN THIS AREA LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0 T J = 175C 10.0
1000
100
100sec 1msec
1.0
T J = 25C VGS = 0V 0.0 0.4 0.8 1.2 1.6 2.0
10 Tc = 25C Tj = 175C Single Pulse 1 1 10
10msec
0.1
100
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF1503PBF
240
2.0
I D = 240A
LIMITED BY PACKAGE
200
ID , Drain Current (A)
160
RDS(on) , Drain-to-Source On Resistance
1.5
(Normalized)
120
1.0
80
0.5
40
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
TJ, Junction Temperature
( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
1
(Z thJC )
D = 0.50
0.1
0.20 0.10
Thermal Response
0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C 0.1
J = P DM x Z thJC
0.001 0.00001
0.0001
0.001
0.01
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1503PBF
1000
15V
ID TOP 59A 100A 140A
RG
20V VGS
D.U.T
IAS tp
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
800
BOTTOM
600
A
0.01
400
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
0 25 50 75 100 125 150 175
Starting T , J Junction Temperature
( C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0
3.0
Charge
ID = 250A
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
2.0
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
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IRF1503PBF
10000
Duty Cycle = Single Pulse
Avalanche Current (A)
1000
0.01
100
0.05 0.10
10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
600
EAR , Avalanche Energy (mJ)
500
TOP Single Pulse BOTTOM 50% Duty Cycle ID = 140A
400
300
200
100
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRF1503PBF
D.U.T
Driver Gate Drive P.W. Period VGS=10V
+
P.W.
Period
D=
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
-V DD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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IRF1503PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3
HEXFET GATE 11234-
LEAD ASSIGNMENTS
IGBTs, CoPACK 1234GATE COLLECTOR EMITTER COLLECTOR
14.09 (.555) 13.47 (.530)
2 GATE- DRAIN 3DRAINSOURCE SOURCE 4 - DRAIN DRAIN
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP L E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
AS S E MB L Y L OT CODE
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04
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